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A28F400BX- - 4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT 256K x16 512K x8 BOOT BLOCK FLASH MEMORY FAMILY

A28F400BX-_302655.PDF Datasheet


 Full text search : 4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT 256K x16 512K x8 BOOT BLOCK FLASH MEMORY FAMILY
 Product Description search : 4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT 256K x16 512K x8 BOOT BLOCK FLASH MEMORY FAMILY


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4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY 4兆位56K x16。为512k × 8)启动块闪存系列
4-MBIT (256K x16, 512K x8) BOOT BLOCK FLASH MEMORY FAMILY
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Intel Corporation
Intel Corp.
Intel, Corp.
E28F004BX-B80 E28F004BX-B60 E28F004BX-T120 28F400B 4-MBIT (256K X 16. 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY 4兆位56 × 16。为512k × 8)启动块闪存系列
OSC 5V SMT PLAS 14X9 CMOS
LENS, ROUND, RED; Colour:Red; Diameter, external:29mm RoHS Compliant: Yes
Series RR3130 round rocker switches have an ergonomic euro design and panel mounting
ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
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4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
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Electronic Theatre Controls, Inc.
PROM
Intel Corp.
Intel Corporation
28F004BX-B 28F400BX-B E28F400BX-B80 28F004BX-T E28 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
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Intel
A28F400BR- A28F400BR-TB 4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
INTEL[Intel Corporation]
CY7C1363B-133AJC CY7C1363B-133AJI CY7C1363B-133AI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 6.5 ns, PQFP100
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9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165
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CONNECTOR ACCESSORY
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CY7C1361C-133AXC CY7C1361C-133BGI CY7C1361C-133AJX 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 9兆位56 × 36/512K × 18)流通过的SRAM
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Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
M36W216TI-ZAT M36W216BIZA M36W216TIZA M36W216TI70Z 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽,开机区块快闪记忆体兆位128KB的x16的SRAM,多个存储产
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽,开机区块快闪记忆体2兆位128KB的x16的SRAM,多个存储产
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STMicroelectronics N.V.
意法半导
CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
M28W160ECT85N1T M28W160ECB85ZB1T M28W160ECB85N1T M 16 Mbit (1Mb x16/ Boot Block) 3V Supply Flash Memory
16 Mbit (1Mbx16, Boot Block) 3V Supply Flash Memory
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory 16兆位兆x16插槽,引导块V电源快闪记忆
ST Microelectronics
STMicroelectronics N.V.
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M36W432TG-ZAT M36W432BGZA M36W432BG70ZA6T M36W432B 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
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M28W320CT M28W320CT100GB1T M28W320CT100GB6T M28W32 32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory
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STMICROELECTRONICS[STMicroelectronics]
 
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A28F400BX- Characteristic A28F400BX- Emitter A28F400BX- applications A28F400BX- Temperature A28F400BX- データシート
 

 

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