| PART |
Description |
Maker |
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S12S DF3A6.2FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.15 to 9.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| BZX85C30 BZX85C33 BZX85C6V2 BZX85C6V8 BZX85C43 BZX |
18V, 1W Zener Diode
Zeners
5.1V, 1W Zener Diode
4.7V, 1W Zener Diode
3.9V, 1W Zener Diode
6.2V, 1W Zener Diode
5.6V, 1W Zener Diode
11V, 1W Zener Diode
10V, 1W Zener Diode
8.2V, 1W Zener Diode
27V, 1W Zener Diode
13V, 1W Zener Diode
22V, 1W Zener Diode
51V, 1W Zener Diode
56V, 1W Zener Diode
33V, 1W Zener Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| DF5A3.6CJE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护外延平面
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Diodes for Protecting against ESD Epitaxial Planar Type
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| BZX79C100 BZX79C3V0 BZX79C2V7 BZX79C24 BZX79C18 BZ |
33V, 0.5W Zener Diode
Zeners 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
SOTiny Dual SPDT Mux/DeMux Switch
5.1V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
4.7V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
3.9V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
6.2V, 0.5W Zener Diode
5.6V, 0.5W Zener Diode
13V, 0.5W Zener Diode
8.2V, 0.5W Zener Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| 1N5232A 1N5221A 1N5221B 1N5221C 1N5221D 1N5270B 1N |
22 V, 5.6 mA, zener diode
13 V, 9.5 mA, zener diode
36 V, 3.4 mA, zener diode
3.3 V, 20 mA, zener diode
30 V, 4.2 mA, zener diode
15 V, 8.5 mA, zener diode
8.7 V, 20 mA, zener diode
2.5 V, 20 mA, zener diode
62 V, 2.0 mA, zener diode
3.3 V, 20 mA, zener diode
19 V, 6.6 mA, zener diode
33 V, 3.8 mA, zener diode
56 V, 2.2 mA, zener diode
11 V, 20 mA, zener diode
28 V, 4.5 mA, zener diode
24 V, 5.2 mA, zener diode
60 V, 2.1 mA, zener diode
60 V, 2.1 mA, zener diode
39 V, 3.2 mA, zener diode
39 V, 3.2 mA, zener diode
17 V, 7.4 mA, zener diode
14 V, 9.0 mA, zener diode
12 V, 20 mA, zener diode
18 V, 7.0 mA, zener diode
5.6 V, 20 mA, zener diode
82 V, 1.5 mA, zener diode
87 V, 1.4 mA, zener diode
4.7 V, 20 mA, zener diode
47 V, 2.7 mA, zener diode
7.5 V, 20 mA, zener diode
110 V, 1.1 mA, zener diode
2.8 V, 20 mA, zener diode
24 V, 5.2 mA, zener diode
28 V, 4.5 mA, zener diode
25 V, 5.0 mA, zener diode
1N52 SERIES ZENER DIODES
FKC 2.5/6-STF
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 250μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
2.5 V, 20 mA, zener diode
36 V, 3.4 mA, zener diode
9.1 V, 20 mA, zener diode
11 V, 20 mA, zener diode
62 V, 2.0 mA, zener diode
110 V, 1.1 mA, zener diode
3.9 V, 20 mA, zener diode
82 V, 1.5 mA, zener diode
16 V, 7.8 mA, zener diode
12 V, 20 mA, zener diode
3.9 V, 20 mA, zener diode
43 V, 3.0 mA, zener diode
68 V, 1.8 mA, zener diode
68 V, 1.8 mA, zener diode
56 V, 2.2 mA, zener diode
30 V, 4.2 mA, zener diode
43 V, 3.0 mA, zener diode
6.2 V, 20 mA, zener diode
3.0 V, 20 mA, zener diode
33 V, 3.8 mA, zener diode
14 V, 9.0 mA, zener diode
8.2 V, 20 mA, zener diode
2.8 V, 20 mA, zener diode
6.8 V, 20 mA, zener diode
75 V, 1.7 mA, zener diode
10 V, 20 mA, zener diode
47 V, 2.7 mA, zener diode
75 V, 1.7 mA, zener diode
51 V, 2.5 mA, zener diode
100 V, 1.3 mA, zener diode
8.7 V, 20 mA, zener diode
22 V, 5.6 mA, zener diode
|
LRC[Leshan Radio Company]
乐山无线电股份有限公
Leshan Radio Company, Ltd.
|
| DF3A8.2FE DF5A3.3JE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.30 to 2.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.10 to 2.40; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.2FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF5A3.6CFU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.21 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6LFV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
|
