| PART |
Description |
Maker |
| STS12NH3LL |
N-CHANNEL 30V - 0.008 Ohm - 12A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET N-CHANNEL 30 V - 0.008 ?- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET N-CHANNEL PowerMESH MOSFET N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFETMOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
| CMLDM8002A CMLDM8002AJ |
SURFACE MOUNT PICOmini DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET 0.28 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
| IRF7702GPBF IRF7703GPBF |
HEXFETPower MOSFET Ultra Low On-Resistance 1.8V Rated Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (1.2mm) Available in Tape & Reel Lead-Free Halogen-Free
|
International Rectifier
|
| STL6NM60N |
N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT (5x5) ultra low gate charge MDmesh II Power MOSFET N-channel 600 V - 0.85 ヘ - 5.75 A - PowerFLAT⑩ (5x5) ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
| 2SJ485 2SJ485TP-FA |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-252VAR P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
| 2SK2530 2SK2530TP-FA |
2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SK3980 |
900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| 2SK3521 2SK3521-01SJ 2SK3521-01S 2SK3521-01L |
N-CHANNEL SILICON POWER MOSFET From old datasheet system N-CHANNEL SILICON POWER MOSFET 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FUJI[Fuji Electric] Fuji Electric Holdings Co., Ltd.
|
| EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD Sanyo Semicon Device
|
| IRLR8726PBF09 IRLR8726TRR IRLR8726TRPBF IRLR8726PB |
HEXFET Power MOSFET 86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra-Low Gate Impedance
|
International Rectifier
|