| PART |
Description |
Maker |
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| W9864G6 W9864G6DB W9864G6DB-7 |
1M x 4 BANKS x 16 BITS SDRAM
1M x 4 BANKS x 16 BITS SDRAM
From old datasheet system
BGA SDRAM
|
WINBOND[Winbond]
Winbond Electronics
|
| W982516BH W982516BH-7 W982516BH-75 W982516BH75I W9 |
4M X 4 BANKS X 16 BIT SDRAM
|
WINBOND[Winbond]
|
| W982516BH75L W982516BH75I W982516BH-75 |
4M X 4 BANKS X 16 BIT SDRAM
|
http://
Winbond Electronics Corp
|
| TBS6416B4E |
1M x 16-Bit x 4-Banks SDRAM
|
M-tec
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 97SD3232RPMK 97SD3232 97SD3232RPME 97SD3232RPMH 97 |
1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
| M14D5121632A M14D5121632A-2.5BG M14D5121632A-3BG |
8M x 16 Bit x 4 Banks DDR II SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I |
1M × 4 BANKS × 16 BITS SDRAM
1M 4 BANKS 16 BITS SDRAM 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54
|
Winbond Electronics Corp
http://
Winbond Electronics, Corp.
|
| W972GG8JB |
32M ?8 BANKS ?8 BIT DDR2 SDRAM
|
Winbond
|
| W986408BH |
2M words x 8 bit x 4 Banks SDRAM(2M瀛?x 8 浣?x 4 缁??姝ュ???AM)
|
Winbond Electronics Corp
|
