| PART |
Description |
Maker |
| LH28F160BJHE-TTL90 LHF16J04 |
16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M 1Mx16 / 2Mx8 )Boot Block 闪速存储器)
Flash Memory 16M (1M × 16/2M × 8)
|
Sharp Corporation
Sharp Electrionic Components
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| PC48F4400P0TB0E RC48F4400P0TB0EA JS28F256P33TFA RC |
32M X 16 FLASH 2.7V PROM, 95 ns, PBGA64
16M X 16 FLASH 2.7V PROM, 105 ns, PDSO56
16M X 16 FLASH 2.7V PROM, 95 ns, PBGA64
|
NUMONYX
|
| S25FL016M0LMAI003 S25FL016M0LNAI003 |
16M X 1 FLASH 3V PROM, PDSO16
16M X 1 FLASH 3V PROM, PDSO8
|
SPANSION LLC
|
| LHF16KA6 LH28F160S3T-L10 LH28F160S3T-L10A |
Flash Memory 16M (2MB 8/1MB 16) 闪存16M内存MB的/1MB6
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB × 8/1MB × 16)
|
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
|
| MBM29DL161BE-90PBT MBM29DL161BE-70TR MBM29DL161BE- |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| S29GL128M10TAIR10 S29GL128M10TAFR93 S29GL128M10TAF |
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
8M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
16M X 16 FLASH 3V PROM, 110 ns, PBGA64 18 X 12 MM, FORTIFIED, BGA-64
256 Megabit, 3.0 Volt-only Page Mode Flash Memory 16M X 16 FLASH 3V PROM, 110 ns, PBGA64
4M X 16 FLASH 3V PROM, 90 ns, PDSO56
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
2M X 16 FLASH 3V PROM, 110 ns, PBGA64
|
Spansion, Inc.
SPANSION LLC
|
| MBM29F016A-90PFTN MBM29F016A-90PFTR MBM29F016A-12 |
FLASH MEMORY 16M (2M x 8) BIT
CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
| K8D1716UBB K8D1716UTB K8D1716UTB-TC09 K8D1716UTB-Y |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
16M Dual Bank NOR Flash Memory
|
http://
Samsung
|
| AT49LV1614AT AT49BV1614AT-90TI AT49BV1614A-90TI AT |
AT49BV1604A(T)/AT49BV/LV1614A(T) [Updated 3/02. 26 Pages] 16M bit . 2.7-Volt(BV)/ 3.0 - Volt (LV). Sectored Flash. Dual Plane. Top or Bottom Boot
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 16兆位100万x 16/2M × 8 3伏，只有闪存
|
Atmel Corp.
Atmel, Corp.
|
| MBM29F017A-12 MBM29F017A-12PFTR MBM29F017A-70 MBM2 |
CAT5E PATCH CORD, 20FT ORANGE, MOLDED 1,600米8）位
16M (2M X 8) BIT 2M X 8 FLASH 5V PROM, 90 ns, PDSO40
16M (2M X 8) BIT 2M X 8 FLASH 5V PROM, 70 ns, PDSO40
CAT5E PATCH CORD, 100FT ORANGE, MOLDED
2.2A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-PDIP -40 to 85
CAT 5E BULK CABLE 100 MHZ,SHLD,PVC-BLUE
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| K9F2808U0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-YIB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
