| PART |
Description |
Maker |
| Z86C95-20AEC |
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes 8位微控制
|
Microchip Technology, Inc.
|
| IRG4BC40U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
|
International Rectifier
|
| BY329X-1000 BY329X-1200 BY329F BY329F-B1200 BY329 |
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Gate Trigger Current Max, Igt:5mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Rectifier diodes fast/ soft-recovery
Rectifier diodes fast, soft-recovery
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IRGPC40U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
| IRGBC40U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A)
|
International Rectifier
|
| IRG4PC40U IRG4PC40U-EPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
40 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
|
Vishay Intertechnology, Inc.
International Rectifier
|
| MY31W MY31 MY31C MY31D MY31T |
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:5mA
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt
YELLOW LED LAMPS
|
MICRO-ELECTRONICS[Micro Electronics]
|
| IRGPC40UD2 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
| IRG4PC40UD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
| MCR106-6 MCR106-8 MCR106-D |
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
Sensitive Gate Silicon Controlled Rectifiers
|
ON Semiconductor
|
| STB20NM60 STB20NM60-1 STP20NM60 STP20NM60FP STB20N |
N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET
N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
|
STMicroelectronics
|
