| PART |
Description |
Maker |
| CGD914MI CGD914 CGD914_MI_6 CGD914-2015 |
860 MHz, 20 dB gain power doubler amplifier
From old datasheet system
|
Quanzhou Jinmei Electro...
Philips
|
| MHW8185R |
19.4 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| MHW8272 |
27 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| MHW8272A |
27 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| BGD802 |
860 MHz, 18.5 dB gain power doubler amplifier
From old datasheet system
CATV WIDEBAND AMPLIFIER,HYBRID,SOT-115J,PLASTIC
|
Philips Semiconductors
|
| BGE885 BGE885_4 BGE88501 BGE885-2015 |
From old datasheet system
860 MHz, 17 dB gain push-pull amplifier
|
Quanzhou Jinmei Electro...
Philips
NXP Semiconductors
|
| MHW8182B |
MHW8182B 860 MHz, 19.1 dB Gain, 128-Channel CATV Amplifier Module
|
Motorola
|
| BGY888 |
860 MHz, 34 dB gain push-pull amplifier BGY888<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| MHW7222 MHW8222 |
22 dB GAIN 750/860 MHz 110/128 CHANNEL CATV AMPLIFIERS
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| BGD802 |
Hybrid amplifier module operating at a supply voltage of 24 V (DC). BGD802<SOT115J|<<<1<Always Pb-free,;BGD802/02<SOT115J|<<<1<Always Pb-free,;
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
|
