| PART |
Description |
Maker |
| HVV0405-175-EK |
UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications
|
HVVi Semiconductors, Inc.
|
| AN561 |
WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS
|
SGS Thomson Microelectronics
|
| 2SC3862 E000891 |
From old datasheet system
NPN EPITAXIAL PLANAR TYPE (TY TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| JDP2S01S |
UHF~VHF Band RF Attenuator Applications 甚高频波段超高频射频衰减器的应用
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 1SV250 0015 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type
From old datasheet system
PIN Diode for VHF/ UHF/ AGC Applications
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| 2SC2347 E000706 |
TRANSISTOR (TV UHF OSCILLATOR/ TV VHF MIXER APPLICATIONS)
TV UFH OSCILLATOR APPLICATIONS TV VHF MIXER APPLICATIONS
From old datasheet system
TRANSISTOR (TV UHF OSCILLATOR, TV VHF MIXER APPLICATIONS)
|
Toshiba Semiconductor
|
| 1SV249 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type
PIN Diode for VHF/ UHF/ AGC Applications
|
Sanyo Semicon Device
|
| EC3H02B |
VHF to UHF Low-Noise Wide-Band Amplifier Applications 甚高频到超高频低噪声宽带放大器应
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 3SK127 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS)
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER, UHF MIXER APPLICATIONS)
N CHANNEL DUAL GATE MOS TYPE (TV TUNER UHF RF AMPLIFIER UHF MIXER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| HVV1012-250 HVV1012-250-EK |
L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10楼矛s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
|
HVVi Semiconductors, Inc.
|
