| PART |
Description |
Maker |
| M5M51016BRT-10VLL M5M51016BRT-10VL M5M51016BTP-10V |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-1048576-BIT CMOS STATICRAM
|
Mitsubishi Electric Corporation
|
| MH1M365CXJ-7 MH1M365CNXJ-5 MH1M365CNXJ-6 MH1M365CN |
HYPER PAGE MODE 37748736-BIT ( 1048576-WORD BY 36-BIT ) DYNAMIC RAM 超页模式37748736位（1048576 - Word6位）动态随机存储器
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M51016BRT-12VL-I M5M51016BRT-12VLL-I M5M51016BTP |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85
From old datasheet system
1048576-BIT CMOSSTATIC RAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HM5118160 HM5116160LTT-5 HM5116160LTT-6 HM5116160L |
1048576-word x 16-bit Dynamic RAM
|
Hitachi Semiconductor
|
| MH1S64CWXTJ-1539 MH1S64CWXTJ-12 MH1S64CWXTJ-15 MH1 |
67108864-BIT (1048576-WORD BY 64-BIT)SynchronousDRAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M51008CFP-70HI |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
MITSUBISHI
|
| HM5118165BTT-8 HM5118165B HM5118165BJ-6 HM5118165B |
1048576-word x 16-bit Dynamic Random Access Memory
|
HITACHI[Hitachi Semiconductor]
|
| HM621100A |
1048576 word / 1 Bit High Speed CMOS Static RAM
|
Hitachi Semiconductor
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
