| PART |
Description |
Maker |
| MMSF3305_D ON2257 MMSF3305-D |
TMOS Single P-Channel Field Effect Transistors
From old datasheet system
Medium Power Surface Mount Products
|
ON Semiconductor
|
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MTM20P10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC
Motorola, Inc
|
| MTM15N45 MTM15N50 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MRF5P21180HR6-08 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, In...
|
| MRF6V12500H GRM55DR61H106KA88L MCGPR63V477M13X26-- |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
Freescale Semiconductor...
|
| MRF7S35120HSR3 |
RF Power Field Effect Transistor
|
Motorola
|
| MRF5S9101MBR1 MRF5S9101NBR1 MRF5S9101NR1 |
RF Power Field Effect Transistors
|
Freescale (Motorola)
|
