| PART |
Description |
Maker |
| MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172- |
High Power Diode Modules 大功率二极管模块
High Power Diode Modules 190 A, 1600 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 800 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 1800 V, SILICON, RECTIFIER DIODE
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| RM10TN-H RM10 |
From old datasheet system
Three-Phase Diode Bridge Modules
Rectifier Diode Modules for ASIPM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MCC220-14IO1 MCD220-16IO1 |
1400V thyristor modules thyristor/diode module
Thyristor Modules Thyristor/Diode Modules 400 A, 1600 V, SCR
Thyristor Modules Thyristor/Diode Modules 400 A, 1400 V, SCR
|
IXYS, Corp.
|
| VBO36-12NO8 VBO36-08NO8 VBO36-16NO8 VBO36-18NO8 VB |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VBO52-12NO7 VBO72-12NO7 VBO72-08NO7 VBO72-18NO7 VB |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VUO85-16NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
| VBE26-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM20C1A-XXF RM20DA/CA/C1A-XXF RM20CA-XXF RM20DA-XX |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| FUO22-12N FUO22-16N |
Three Phase Rectifier Bridge in ISOPLUS i4-PACTM 3 PHASE, 28 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
From old datasheet system
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
