| PART |
Description |
Maker |
| GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
| GT8G134 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT25G10106 GT25G101 |
SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| GT20G101SM E001913 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT20G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT15G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| RJP4301APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4003ASA-0-Q0 RJP4003ASA |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CY25CAJ-8F CY25CAJ-8F-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4006AGE |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
