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BS62LV4007 - Asynchronous 4M(512Kx8) bits Static RAM High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel surface mount silicon Zener diodes Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8

BS62LV4007_280935.PDF Datasheet

 
Part No. BS62LV4007 BS62LV4007TIP70 BS62LV4007EC BS62LV4007EC-55 BS62LV4007EC-70 BS62LV4007ECG55 BS62LV4007ECG70 BS62LV4007ECP55 BS62LV4007ECP70 BS62LV4007EI BS62LV4007EI-55 BS62LV4007EI-70 BS62LV4007EIG55 BS62LV4007EIG70 BS62LV4007EIP55 BS62LV4007EIP70 BS62LV4007PC BS62LV4007PC-55 BS62LV4007PC-70 BS62LV4007PCG55 BS62LV4007PCG70 BS62LV4007PCP55 BS62LV4007PCP70 BS62LV4007PI BS62LV4007PI-55 BS62LV4007PI-70 BS62LV4007PIG55 BS62LV4007PIG70 BS62LV4007PIP55 BS62LV4007PIP70 BS62LV4007SC
Description Asynchronous 4M(512Kx8) bits Static RAM
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel
surface mount silicon Zener diodes
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8

File Size 370.88K  /  10 Page  

Maker

BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.



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(CHINA HK & SZ)
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Part: BS62LV4007EC-70
Maker: BSI
Pack: TSOP32
Stock: Reserved
Unit price for :
    50: $2.79
  100: $2.65
1000: $2.51

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 Full text search : Asynchronous 4M(512Kx8) bits Static RAM High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel surface mount silicon Zener diodes Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
 Product Description search : Asynchronous 4M(512Kx8) bits Static RAM High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel surface mount silicon Zener diodes Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8


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CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 80 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 25 ns, CQCC32
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