| PART |
Description |
Maker |
| STGY50NC60WD GY50NC60WD |
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGW50NB60M 9107 |
N-CHANNEL 50A - 600V - TO-247 PowerMESH??IGBT
N-CHANNEL 50A - 600V - TO-247 PowerMESH?/a> IGBT
N-CHANNEL 50A - 600V - TO-247 POWERMESH IGBT
From old datasheet system
N-CHANNEL 50A - 600V - TO-247 PowerMESH⑩ IGBT
|
??????浣?
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STGW50NB60H |
N-CHANNEL 50A - 600V TO-247 POWERMESH IGBT
|
ST Microelectronics
|
| FDD16AN08A0 FDD16AN08A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m
N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm
N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз
N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STY100NS20FD06 STY100NS20FD |
N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY Power MOSFET
N-channel 200V - 0.022ヘ - 100A - Max247 MESH OVERLAY⑩ Power MOSFET
|
STMicroelectronics
|
| SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五（DRM）的| 50A条口（T）的有效值|08VARM8
TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
|
|
| 2MBI50L-060 |
50 A, 600 V, N-CHANNEL IGBT
IGBT(600V 50A)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 2MBI50F-060 |
IGBT(600V 50A)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 1MBH50D-060S 1MBH50D-060S04 |
600V / 50A Molded Package
|
Fuji Electric
|
| RURG5060F085 |
50A, 600V Ultrafast Diode
|
Fairchild Semiconductor
|
| PRHMB50A6 |
IGBT MODULE Chopper 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
