| PART |
Description |
Maker |
| M5M51008BKV-15VL M5M51008BKV-15VLL M5M51008BKV-70V |
128K X 8 STANDARD SRAM, 120 ns, PDSO32
From old datasheet system
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| HN28F101 HN28F101P-20 HN28F101T-15 HN28F101R-12 HN |
131072-word x 8-bit CMOS Flash Memory
131072-word 8-bit CMOS Flash Memory 131072字？8位CMOS闪存
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| CXK581000ATM/AYM/AM/AP-10LL CXK581000ATM/AYM/AM/AP |
128K X 8 STANDARD SRAM, 100 ns, PDIP32
128K X 8 STANDARD SRAM, 55 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32
131072-word x 8-bit High Speed CMOS Static RAM
131072-word x 8-bit High Speed CMOS Static RAM
|
Cypress Semiconductor, Corp.
SONY
|
| M5M51008BKV-10VL-I M5M51008BKV-10VLL-I M5M51008BKV |
1048576-bit (131072-word by 8-bit) CMOS static SRAM
|
Mitsubishi Electric Corporation
|
| M5M51008DFP M5M51008DRV-55H M5M51008DRV-70H M5M510 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M5M51008CKR-70 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Sem...
|
| M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HN27C101ATT |
131072-word 5 8-bit CMOS One Time Electrically Programmable ROM
|
Renesas Technology / Hitachi Semiconductor
|
| CXK5T81000ATN CXK5T81000ATN-10LLX CXK5T81000ATN-12 |
131072-word X 8-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
| M5M27C202FP-12 M5M27C202FP-15 M5M27C202J-12 M5M27C |
MB 41C 27#20 14#16 SKT RECP
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
