| PART |
Description |
Maker |
| IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns
JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| IS61LV6416 IS61LV6416-10 IS61LV6416-10B IS61LV6416 |
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY 64K的16高速CMOS静态RAM.3 V电源
ASYNCHRONOUS STATIC RAM
|
ETC
ICSI[Integrated Circuit Solution Inc]
|
| IS61LV12824 21_61LV12824 IS61LV12824-9B |
9ns; 3.3V; 128K x 24 high-speed CMOS CMOS static RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
|
ICSI
|
| IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM
JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70
WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA
High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
|
Integrated Device Technology, Inc.
IDT
|
| IS61WV12816DALL/DALS IS61WV12816DALL11 IS61WV12816 |
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS61WV5128BLL-10KLI-TR IS61WV5128BLL-10BLI IS61WV5 |
512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| IS61WV25616BLS-25TLI-TR IS61WV25616ALL/ALS IS64WV2 |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| MCM6323AYJ10 MCM6323AYJ10R SCM6323AYJ10A SCM6323AY |
64K X 16 bit 3,3V asynchronous fast static RAM
ER 3C 3#12 PIN PLUG RoHS Compliant: No
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| IS64WV1288EEBLL-10KLA1 IS64WV1288EEBLL-10KLA3 IS64 |
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
|
Integrated Silicon Solution, Inc
|
| IS61WV6416EEBLL |
64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
|
Integrated Silicon Solution, Inc
|
