| PART |
Description |
Maker |
| HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷
1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group
SIEMENS AG
|
| HYB3164165BT-40 HYB3165165BT-40 HYB3166165BT-40 HY |
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 60 ns, PDSO50
INDUCTOR CHIP .10UH 5% 0805 SMD 4M X 16 EDO DRAM, 60 ns, PDSO50
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 40 ns, PDSO50
|
http://
SIEMENS A G
SIEMENS AG
|
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB3165405BT-40 HYB3164405BT-40 HYB3164405BJ-40 HY |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 40 ns, PDSO32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
|
http://
Infineon Technologies AG
SIEMENS AG
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| IS41C85120-60K IS41C85120-60KI IS41C85120-35K IS41 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 512K X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| IS41LV16256-35K IS41LV16256-35T IS41LV16256-60K IS |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 60 ns, PDSO40
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 35 ns, PDSO40
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| IS41C16128-35T IS41C16128-35TI IS41C16128-35K IS41 |
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 35 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 40 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 45 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 50 ns, PDSO40
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 128K X 16 EDO DRAM, 60 ns, PDSO40
|
Integrated Silicon Solution, Inc.
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24
POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88%
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS A G
SIEMENS AG
http://
Siemens Semiconductor G...
|
| HYB514400BJ-BT60 Q67100-Q749 Q67100-Q750 Q67100-Q7 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 70 ns, PDSO20
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 80 ns, PDSO20
RES 121-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
|
SIEMENS AG
Siemens Semiconductor G...
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
