| PART |
Description |
Maker |
| 1SS357 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS321 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
Toshiba Semiconductor
|
| 1SS294 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS396 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| KDR729 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC Holdings KEC(Korea Electronics)
|
| KDR728 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC Holdings KEC[KEC(Korea Electronics)]
|
| 1SS396 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| BUP302 Q67078-A4205-A2 |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) From old datasheet system High Speed CMOS Logic Dual Decade Ripple Counters 16-PDIP -55 to 125 IGBT的(低正向压降高开关速度低尾电流的无闩锁雪崩额定
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
| 1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|