| PART |
Description |
Maker |
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1 |
1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
From old datasheet system
N-hannel Enhancement-ode Logic Level SOT23
TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MMFT2N02EL MMFT2N02EL_D ON2221 |
From old datasheet system
N-hannel Enhancement-ode Logic Level SOT23
MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10 |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| MTD12N06EZL_D ON2462 MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
|
ON Semiconductor
|
| MTD1N80E MTD1N80E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
|
ON Semiconductor
Motorola, Inc
|
| MMFT2406T1 MMFT2406T MMFT2406T1_D ON2217 |
MEDIUM POWER TMOS FET 700 mA 240 VOLTS 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
