| PART |
Description |
Maker |
| K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682 |
2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM
2M X 36 QDR SRAM, 0.5 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| IS61DDPB42M36A/A1/A2 IS61DDPB44M18A IS61DDPB44M18A |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61DDPB22M36A/A1/A2 IS61DDPB24M18A IS61DDPB24M18A |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7R320982M K7R321882 K7R321882M K7R323682 K7R32368 |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 1Mx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7R163684B06 K7R161884B |
512Kx36 & 1Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| CY7C1911CV18 |
(CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
| K7Q161862B |
(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
| K7R161882B K7R163682B K7R160982B |
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| UPD44325084BF5-E33-FQ1 PD44325084BF5-E50-FQ1-A PD4 |
4M X 8 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R1618 |
512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36
512Kx36 & 1Mx18 QDR II b4 SRAM
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| PD46184184BF1-E40-EQ1 PD46185084BF1-E40-EQ1 PD4618 |
18M-BIT DDR II SRAM 4-WORD BURST OPERATION
18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
