| PART |
Description |
Maker |
| NE6500496 |
4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| HWF1682RA |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| MGF0907B1 MGF0907B_1 MGF0907B |
L,S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TIM5964-8SL-422 |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| TIM5053-4SL |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| TIM3742-4UL |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| HWL26NPB |
L-Band GaAs Power FET
|
Hexawave, Inc
|
| TPM2626-30 |
MICROWAVE POWER GAAS FET
|
TOSHIBA[Toshiba Semiconductor]
|
|
