| PART |
Description |
Maker |
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| BU941ZT BU941ZTFP 5288 BUB941ZT BUB941ZTT4 |
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-263
From old datasheet system
HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
http://
|
| 2SC5476 |
3 A, 85 V, NPN, Si, POWER TRANSISTOR
NPN Epitaxial Planar Silicon Darlington Transistor
Darlington Transistors
|
Sanyo
|
| 2SD768K |
Silicon NPN Darlington Transistor
TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 6A I(C) | TO-220AB
|
Hitachi Semiconductor
|
| 2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTOR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 3A条一（c）|26
|
NEC Corp.
NEC, Corp.
|
| JANTXV2N7370 2N7370 JAN2N7370 JANTX2N7370 |
NPN Darlington Transistor
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-254AA
|
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-LAWRENCE
|
| JANTXV2N6058 JANTXV2N6059 2N6058 2N6059 |
NPN Darlington Transistor
NPN DARLINGTON POWER SILICON TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| SLA4031 SMA4021 SLA4021 SLA4041 SLA4071 |
Quad High-Voltage, High-Current Darlington Arrays
NPN Darlington With built-in flywheel diode
|
Allegro MicroSystems
SANKEN[Sanken electric]
|
| BC108DCSM |
Dual Bipolar NPN Devices in a hermetically sealed
TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 100MA I(C) | LLCC
|
Seme LAB
|
| 2N2979DCSM |
TRANSISTOR | BJT | PAIR | NPN | 60V V(BR)CEO | 30MA I(C) | LLCC
Dual Bipolar NPN Devices in a hermetically sealed
|
Seme LAB
|
