| PART |
Description |
Maker |
| SIHB12N50C-E3 SIHF12N50C-E3 SIHP12N50C |
100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC
|
Vishay Siliconix
|
| DTM441513 |
P-Channel 30-V (D-S) MOSFET 100 % Rg Tested
|
DinTek Semiconductor Co,.Ltd
|
| SIR880DP |
N-Channel 80 V (D-S) MOSFET 100 % UIS Tested
|
Vishay Siliconix
|
| VS-FCSP05H40TR |
Supplied tested and on tape and reel
|
Vishay Siliconix
|
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| STH110N10F7-2 STH110N10F7-6 |
High avalanche ruggedness
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-6 package
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| RFFM8250QTR7 RFFM8250QSQ RFFM8250QSB RFFM8250QSR R |
WiFi Switch LNA Module 2.4GHz to 2.5GHz Tested in Accordance with AEC-Q100
|
RF Micro Devices
|
| SPD30P06P08 SPD30P06P SPD30P06PG |
SIPMOSò Power-Transistor Features Enhancement mode Avalanche rated
SIPMOS? Power-Transistor Features Enhancement mode Avalanche rated
|
Infineon Technologies AG
|
| GAABJ40M GAABJ40M-15 |
Press Fit Avalanche Automotive Rectifier
Press Fit Avalanche Automotive Rectifier Avalanche Voltage 37 to 41Volts Current 40 Amps
|
GOOD-ARK Electronics
|
