| PART |
Description |
Maker |
| MCH5811 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH5818 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| CPH5824 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications MOSFET的：N沟道MOSFET的硅SBD智能交通：肖特基二极管通用开关器件应
Nch SBD
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| VEC2815 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| SCH2807 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| CPH5801 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| TT8U2 TT8U2TCR |
1.5V Drive Pch SBD MOSFET
2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET TSST8, 8 PIN
|
Rohm
Central Semiconductor, Corp.
|
| VEC2818 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SCH2830 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| VEC2811 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| ES6U2 |
1.5V Drive Nch SBD MOSFET
|
Rohm
|
