| PART |
Description |
Maker |
| NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511 |
X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
CEL[California Eastern Labs]
|
| NE325S01 NE325S01-T1 NE325S01-T1B |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
NEC[NEC]
|
| NE434S01 NE434S01-T1B NE434S01-T1 |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
NEC[NEC]
|
| NE3511S02-T1C |
X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Electronics Corporation
|
| NE32400 NE24200 |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC[NEC]
|
| SBFP540M |
Ultrahigh-Frequency Transistors
UHF to C Band Low Noise Amplifier, Low Phase Noise Oscillation Applications
|
Sanyo Semicon Device
|
| OP-270A OP-270AJ8 OP-270E OP-270EJ8 OP-270G OP-270 |
From old datasheet system
Dual/Quad Low Noise / Precision Operational Amplifiers
Dual/Quad Low Noise, Precision Operational Amplifiers DUAL OP-AMP, 75 uV OFFSET-MAX, 6 MHz BAND WIDTH, CDIP8
Dual/Quad Low Noise, Precision Operational Amplifiers QUAD OP-AMP, 400 uV OFFSET-MAX, 6 MHz BAND WIDTH, CDIP14
Dual/Quad Low Noise, Precision Operational Amplifiers DUAL OP-AMP, 250 uV OFFSET-MAX, 6 MHz BAND WIDTH, PDIP8
Dual/Quad Low Noise, Precision Operational Amplifiers QUAD OP-AMP, 1000 uV OFFSET-MAX, 6 MHz BAND WIDTH, PDIP14
Dual/Quad Low Noise, Precision Operational Amplifiers QUAD OP-AMP, 1000 uV OFFSET-MAX, 6 MHz BAND WIDTH, PDSO16
Dual/Quad Low Noise, Precision Operational Amplifiers 四低噪声，高精度运算放大
|
LINER[Linear Technology]
Linear Technology Corporation
Linear Technology, Corp.
|
| 2SC4226 2SC4226-T2R23-A |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
|
NEC[NEC]
|
| 2SC4320 E000939 |
From old datasheet system
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| NE321000 NE321000- |
TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 15MA I(DSS) | CHIP 晶体管|场效应| N沟道| 4V五（巴西）直| 15mA的我（直）|芯片
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC, Corp.
NEC[NEC]
|
| TGA1307 TGA1307-EPU |
Ka Band Low Noise Amplifier 23000 MHz - 29000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
|
