| PART |
Description |
Maker |
| EL4452C EL4452CN EL4452CS |
Wideband Variable-Gain Amplifier with Gain of 10
|
ELANTEC[Elantec Semiconductor]
|
| EL4451 EL4451CN EL4451CS |
Wideband Variable-Gain Amplifier, Gain of 2
|
Intersil Corporation
|
| AD605AR-REEL AD605AR-REEL7 AD605BR-REEL AD605BR-RE |
6.5V; 1.2-1.4W; dual, low-noise, single-supply variable gain amplifier. For ultrasound and sonar time-gain control, high performance AGC systems
|
Analog Devices
|
| MAALSS0034TR-3000 |
Miniature Broadband Gain Stage 70 - 3000 MHz
|
M/A-COM Technology Solu...
|
| CGY121A Q-62702-G66 CGY121 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| 313E |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC313 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| CHA2294-99F_00 CHA2294 CHA2294-99F/00 |
35-40GHz Low Noise, Variable Gain Amplifier
35-40GHz Low Noise, Variable Gain Amplifier 35 - 40GHz的低噪声，可变增益放大器
|
United Monolithic Semic...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
|
| Q62702-F1492 BFR182W |
NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFG193 Q62702-F1291 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
|
SIEMENS[Siemens Semiconductor Group]
http://
|
