| PART |
Description |
Maker |
| 1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V，最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电3V，最大反向电流降.01μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电12V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电14V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V，最大反向电.8μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V，最大反向电0μA的硅外延平面型齐纳二极管)
PC 5/10-G-7,62
PCV 5/ 4-G-7,62
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V，最大反向电0μA的硅外延平面型齐纳二极管)
From old datasheet system
Silicon Epitaxial Planar Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| MA27V17 |
Small-signal device - Diodes - variable Capacitance Diodes
Silicon epitaxial planar type
|
Panasonic Semiconductor
|
| MA26V01 |
Small-signal device - Diodes - variable Capacitance Diodes
Silicon epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
| MA27P01 |
Small-signal device - Diodes - PIN Diodes
Silicon epitaxial planar type
From old datasheet system
|
PANASONIC[Panasonic Semiconductor]
|
| MA2Z001 |
Silicon epitaxial planar type For switching circuits
Small-signal device - Diodes - Swicthing Diodes
|
Panasonic Semiconductor
|
| ZPY91 ZPY110 ZPY150 ZPY120 ZPY20 ZPY200 ZPY5.1 ZPY |
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:12-3
Silicon-Power-Z-Diodes (non-planar technology) 8.2 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
Silicon-Power-Z-Diodes (non-planar technology) 7.45 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
Silicon-Power-Z-Diodes (non-planar technology) 22.05 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
|
Diotec Elektronische
DIOTEC[Diotec Semiconductor]
Diotec Semiconductor AG
|
| MA2Z372 MA372 |
Silicon epitaxial planar type
Small-signal device - Diodes - variable Capacitance Diodes
From old datasheet system
|
PANASONIC CORP
|
| MA10799 MA3D799 |
Power Device - Diodes - Shottky Barrier Diodes(SBD)
Silicon epitaxial planar type (cathode common)
|
PANASONIC[Panasonic Semiconductor]
|
| MA7D56 MA3D756 |
Power Device - Diodes - Shottky Barrier Diodes(SBD)
Silicon epitaxial planar type (cathode common)
|
PANASONIC[Panasonic Semiconductor]
|
| MA2Q736 MA736 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Silicon epitaxial planar type
From old datasheet system
|
Panasonic Semiconductor
|
| C15 BZX97_C10 BZX97_C11 BZX97_C12 BZX97_C13 BZX97_ |
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
0.5W硅平面稳压二极管
0.5W SILICON PLANAR ZENER DIODES
|
Shanghai LUNSURE Electronic Technology Co., Ltd.
CHENYI[Shanghai Lunsure Electronic Tech]
Shanghai Lunsure Electr...
|
