| PART |
Description |
Maker |
| BB502M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
| BB505C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation.
|
| BB102C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier 在偏置电路场效应晶体管集成电路超高频射频放大器建
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| BB304M |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| BB501C BB501 BB5.1 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier 内建偏置电路场效应晶体管集成电路超高甚高频射频放大器
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| TBB1012 TBB1012MMTL-E |
Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1002 TBB1002BMTL-E TBB100206 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB403M BB403 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| C3310 |
Low Phase Noise Build in PLL-Circuit
|
Vectron International
|
| BB506C BB506CFS |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
