| PART |
Description |
Maker |
| MHW2821-1 MHW2821-2 |
UHF Silicon FET Power Amplifier
|
Motorola, Inc
|
| MHW2707A1 |
UHF Silicon FET Power Amplifier
|
Motorola, Inc
|
| MHW2707-1 |
UHF Silicon FET Power Amplifier
|
Motorola, Inc
|
| 2SK2922 |
Silicon N Channel MOS FET UHF Power Amplifier
|
Hitachi Semiconductor
|
| 2SK3174A |
From old datasheet system
Silicon N Channel MOS FET UHF Power Amplifier
|
HITACHI[Hitachi Semiconductor]
|
| 2SK2974 SK2974 |
RF POWER MOS FET(VHF/UHF power amplifiers)
From old datasheet system
MITSUBISHI RF POWER MOS FET
|
Mitsubishi Electric Semiconductor
|
| TDA8928J TDA8928ST |
Power stage 2 x 10 or 1 x 20 W class-D audio amplifie
|
NXP Semiconductors
|
| TDA8928J TDA8928ST |
Power stage 2 x 10 or 1 x 20 W class-D audio amplifie
|
Philips Semiconductors
|
| 2SK1310A EA09774 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
From old datasheet system
RF POWER MOS FET for UHF TV ROADCAST TRANSMITTER
|
Toshiba Semiconductor
|
| 3SK317 3SK317ZR-TL-E |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Renesas Electronics Corporation
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
