| PART |
Description |
Maker |
| LH28F640SP LH28F640SPHT-PTL12 |
64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory
|
Sharp Electrionic Components
|
| MR27V6452D |
64Mbit Electrically Programmable Read-Only Memory With Page Mode.(4M字6位或8位M字位一次性可编程ROM 64兆比特电可编程只读页面模式。（4分字× 16位或8位M字8位一次性可编程ROM的字记忆体）
|
OKI SEMICONDUCTOR CO., LTD.
|
| HYB39S64800BT HYB39S64400BT HYB39S64XXX0BTL |
64MBit Synchronous DRAM(64M4× 2M× 8)同步动态RAM)
64MBit Synchronous DRAM(64M4× 4M× 4)同步动态RAM)
64MBitSynchronous DRAM(64M位同步动态RAM(低功耗版))
|
SIEMENS AG
|
| LH28F640BFHG-PBTLE7 |
Flash Memory, 64Mbit
From old datasheet system
|
Sharp Microelectronics of the Americas
|
| K4D623238B-GC K4D623238B-GC_L33 K4D623238B-GC_L40 |
64Mbit DDR SDRAM 64Mb的DDR SDRAM内存
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| M74DW66500B |
2x 64Mbit Flash Memory and 32Mbit Pseudo SRAM
|
ST Microelectronics
|
| YG962S6R |
SILICON DIODE
IC, FLASH, X8, 64MBIT, 8MB, 3V, TSOP
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| IS41LV85125B-60K IS41LV85125B-60KL IS41LV85125B |
512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 512K X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| HYB3116400BJ-60 HYB3116400BJ-50 HYB3117400BJ-50 HY |
3.3V 4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 50 ns, PDSO26
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, TSOP2-26/24
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, SOJ-26/24
|
SIEMENS AG
Infineon Technologies AG
http://
|
| MSM51V16165D MSM51V16165DSL MSM51V16165D-70JS MSM5 |
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
From old datasheet system
DRAM / FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
| AM9016EZL AM9016DDL AM9016CZL |
16K X 1 PAGE MODE DRAM, 200 ns, CQCC18
16K X 1 PAGE MODE DRAM, 250 ns, CDIP16
16K X 1 PAGE MODE DRAM, 300 ns, CQCC18
|
ADVANCED MICRO DEVICES INC
|
