| PART |
Description |
Maker |
| MB81V4265-70 |
CMOS 256K ×16BIT
Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
| GLT440L16 GLT440L16-35TC GLT440L16-40TC GLT440L16- |
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
|
List of Unclassifed Manufacturers
ETC
|
| KM416C256D KM416V256D |
256K X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
|
Samsung semiconductor
|
| A418316V-35U A418316V-25 A418316V-25U A418316S-25 |
256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
|
http://
AMIC Technology
|
| V53C8258H35 |
HIGH PERFORMANCE 256K X 8 EDO PAGE MODE CMOS DYNAMIC RAM 高性能256K × 8 EDO公司页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| V53C8256L |
High Peformance 3.3 Volt 256K x 8 Bit Fast Page Mode CMOS Dynamic RAM(高性能3.3V 256Kx8快速页面模式动态RAM)
|
Mosel Vitelic, Corp.
|
| KM41256AJ-12 KM41257AJ-12 KM41256AJ-10 KM41257AJ-1 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode 256K × 1位动态随机存储器与页/半字节模
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM4216C258 |
256K x 16 Bit CMOS Video RAM(256K x 16 浣?CMOS瑙??RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
