| PART |
Description |
Maker |
| NTE15049AC NTE15040-ECG NTE15048-ECG NTE15050AC NT |
Surge arrester (gas filled). Nominal breakdown voltage 240VAC.
Surge arrester (gas filled). Nominal breakdown voltage 600VDC
Surge arrester (gas filled). Nominal breakdown voltage 230VDC
Surge arrester (gas filled). Nominal breakdown voltage 300VDC
Surge arrester (gas filled). Nominal breakdown voltage 90VDC
Surge arrester (gas filled). Nominal breakdown voltage 110VDC
Surge Arresters (Gas Filled) 避雷器（充气
Surge arrester (gas filled). Nominal breakdown voltage 350VDC
Surge arrester (gas filled). Nominal breakdown voltage 145VDC
Surge arrester (gas filled). Nominal breakdown voltage 470VDC
Surge arrester (gas filled). Nominal breakdown voltage 75VDC
Surge arrester (gas filled). Nominal breakdown voltage 120VAC.
|
NTE Electronics, Inc.
|
| EC2-6 EC2 EC2-12ND EC2-12NP EC2-12NU EC2-12NJ EC2- |
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type
COMPACT AND LIGHTWEIGHT/ SMALL MOUNTING SIZE/ HIGH BREAKDOWN VOLTAGE
High Insulation/ High breakdown voltage/ compact and lightweight/ Surface mounting type
A/D Converter (A-D) IC; Resolution (Bits):24; Sample Rate:192kSPS; Input Channels Per ADC:8; Input Channel Type:Differential; Data Interface:Serial; Package/Case:48-LQFP RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Capacitor Type:Suppression; Voltage Rating:100VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.022uF; Capacitance Tolerance: 10%; Lead Pitch:5.00mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
COMPACT AND LIGHTWEIGHT, SMALL MOUNTING SIZE, HIGH BREAKDOWN VOLTAGE 小巧轻盈，小安装尺寸，高击穿电压
|
NEC Corp.
NEC, Corp.
|
| BF623 Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| BFN36 BFN38 Q62702-F1303 Q62702-F1246 |
From old datasheet system
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2SC3361 |
Fast switching speed. High breakdown voltage.Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| HDS20U30GW |
High Breakdown Voltage
|
SemiHow Co.,Ltd.
|
| 2SA1257 |
High breakdown voltage. Small output capacitance.Collector-base voltage VCBO -180 V
|
TY Semiconductor Co., Ltd
|
| 2SC5063 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
Panasonic
|
| 2SC5034 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC3978 2SC3978A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
Panasonic Semiconductor
|
