| PART |
Description |
Maker |
| TN28F020-120 TN28F020-150 TN28F020-90 TE28F020-120 |
28F020 2048K (256K X 8) CMOS FLASH MEMORY
|
INTEL[Intel Corporation]
|
| P28F020-90 |
28F020 2048K (256K X 8) CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
Intel, Corp.
|
| DS1249Y-85IND |
2048k Nonvolatile SRAM 256K X 8 NON-VOLATILE SRAM MODULE, 85 ns, PDIP32
|
Maxim Integrated Products, Inc.
|
| CAT28C257 CAT28C257HN-12 CAT28C257PI-90T CAT28C257 |
256K CMOS parallel EEPROM 90ns
256K CMOS parallel EEPROM 150ns
256K CMOS parallel EEPROM 120ns
256K-Bit CMOS PARALLEL E2PROM
|
http://
CATALYST[Catalyst Semiconductor]
|
| MF28F020-12 |
2048K CMOS Flash Memory
|
Intel
|
| LH532100B LH532100BD LH532100BN LH532100BS LH53210 |
CMOS 2M(256K x 8) Mask-Programmable ROM
CMOS 2M (256K x 8) MROM
CONN SCSI .085 MALE RA 14POS
|
Sharp Electrionic Components
Sharp Corporation
|
| W29C020T-90 W29C020T-12 W29C020T-90A W29C020T-70B |
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDSO32
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDIP32
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDSO32
BOX 3.4X2.56X1.02 W/6 BTNS ALMOND 256K X 8 FLASH 5V PROM, 70 ns, PDSO32
BOX 3.4X2.56X1.02 W/6 BTNS BLK 256K X 8 FLASH 5V PROM, 70 ns, PDSO32
BOX 3.4X2.56X1.02 W/3 BTNS ALMOND
BOX 2.53X1.73X.65 W/2 BTNS BLK
256K X 8 CMOS FLASH MEMORY
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| MX29F022NBPC-55 MX29F022NTPC-55 MX29F022BPC-55 MX2 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDSO32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDIP32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| 27C4096-12 27C4096-10 |
4M-BIT [512K x 8/256K x 16] CMOS EPROM 4分位[12k × 8/256K × 16]的CMOS存储
|
Macronix International Co., Ltd.
|
| AS7C4098 AS7C34098-15TC AS7C34098-15TCN AS7C34098- |
High Speed CMOS Logic Quad 2-Input Schmitt-Triggered NAND Gates 14-SOIC -55 to 125
5V/3.3V 256K x 16 CMOS SRAM 5V/3.3V 256K × 16 CMOS SRAM
5V/3.3V 256K x 16 CMOS SRAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44
5V/3.3V 256K x 16 CMOS SRAM 256K X 16 STANDARD SRAM, 15 ns, PDSO44
Replaced by SN74LV240A : Octal Buffer/Driver With 3-State Outputs 20-SSOP -40 to 85
Replaced by SN74LV240A : Octal Buffer/Driver With 3-State Outputs 20-SOIC -40 to 85
Replaced by SN74LV240A : Octal Buffer/Driver With 3-State Outputs 20-TSSOP -40 to 85
Octal Buffers/Drivers With 3-State Outputs 20-SSOP -40 to 85
Octal Buffers/Drivers With 3-State Outputs 20-SOIC -40 to 85
Octal Buffers/Drivers With 3-State Outputs 20-TVSOP -40 to 85
SRAM - 5V Fast Asynchronous
|
ALLIANCE MEMORY INC
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| AS4C256K16E0 |
5V 256K×16 CMOS DRAM (EDO)(5V 256K×16 CMOS动态RAM（扩展数据总线
|
Alliance Semiconductor Corporation
|
