| PART |
Description |
Maker |
| SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C
FLUKE-741B 120 REFURBISHED BY NEWARK
KJA 79C 79#22 PIN RECP
128Kx8 EEPROM
PSoC® Mixed-Signal Array
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式EEPROM
DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8）页模式的EEPROM
IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation
Intel Corp.
|
| CY7C1006D-10VXI |
1-Mbit (256K x 4) Static RAM 256K X 4 STANDARD SRAM, 10 ns, PDSO28
|
Cypress Semiconductor, Corp.
|
| CY7C1041D-12ZSXE |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| HY29LV400TT90I HY29LV400BT90I |
4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory 4兆位（为512k × 8/256K × 16）低压快闪记忆体
|
Hynix Semiconductor, Inc.
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| SST29VF010-70-4C-NH SST29SF010-70-4C-NH SST29SF040 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 2.7V PROM, 55 ns, PDSO32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 2.7V PROM, 55 ns, PQCC32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 55 ns, PDSO32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 5V PROM, 55 ns, PDSO32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 2.7V PROM, 55 ns, PQCC32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 2.7V PROM, 55 ns, PDSO32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 5V PROM, 55 ns, PDSO32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 55 ns, PQCC32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 55 ns, PQCC32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 5V PROM, 70 ns, PDIP32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 70 ns, PDIP32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 70 ns, PDSO32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512千位/ 1兆位/ 2 4兆位（8）小部门闪光
|
Silicon Storage Technol...
SILICON STORAGE TECHNOLOGY INC
Elektron Technology PLC
Silicon Storage Technology, Inc.
|
| IC41C16257S-35T IC41C16257S-60TI IC41LV16257S-50K |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K × 16兆位）充满活力和快速页面模式内
CONNECTOR ACCESSORY
|
Integrated Circuit Solution Inc
Electronic Theatre Controls, Inc.
Integrated Circuit Solu...
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| CY7C1368C-200AJXI CY7C1368C-200AXC |
9-Mbit (256K x 32) Pipelined DCD Sync SRAM 256K X 32 CACHE SRAM, 3 ns, PQFP100
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
