| PART |
Description |
Maker |
| KM616FR1000 |
64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低电压CMOS 静态RAM) 64K的x16位超低功耗和低电压的CMOS全静态RAM4K的16位超低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| AT28LV010-20 AT28LV010-25 AT28LV010-20PC AT28LV010 |
1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 200 ns, PDIP32
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 250 ns, PDSO32
|
Atmel Corp.
Atmel, Corp.
|
| P80C51 P80C51RA P87C51FA P87C51FB P87C51FC P87C51R |
80C51 8-bit microcontroller family 8K-64K/256-1K OTP/ROM/ROMless, low voltage 2.7V-5.5V), low power, high speed (33 MHz)
|
Philips
|
| 7C4282V_92V-15 7C4282V_92V-25 CY7C4282V CY7C4282V- |
64K/128Kx9 Low Voltage Deep Sync FIFOsw/ Retransmit & Depth Expansion
From old datasheet system
64K/128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion
128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion(128Kx9低压深同步先进先出（FIFO
64Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion(64Kx9 深同步先进先出（FIFO中断发深度扩展)
128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion(128Kx9低压深同步先进先出（FIFO 128Kx9低电压后同步FIFO的瓦重发
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
|
| A62S6316V-70SI |
64K X 16 BIT LOW VOLTAGE CMOS SRAM
|
AMIC Technology
|
| LP62S1664C LP62S1664CU-55LLI LP62S1664CU-55LLT LP6 |
64K X 16 BIT LOW VOLTAGE CMOS SRAM
|
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| AT49BV512-12JC AT49BV512-12JI AT49BV512-12PC AT49B |
512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory 64K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection
64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
From old datasheet system
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28
64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
| AT28BV64 AT28BV64-30SI AT28BV64-30PC AT28BV64-30PI |
64K 8K x 8 Battery-Voltage CMOS E2PROM
64K (8K x 8) Battery-Voltage CMOS
From old datasheet system
|
ATMEL[ATMEL Corporation]
|
| IDT709089 IDT709089L12PF IDT709089L12PFI IDT709089 |
64K x 8 Sync, Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 64K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM
Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-SOIC -40 to 85 64K X 8 DUAL-PORT SRAM, 30 ns, PQFP100
Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-TSSOP 0 to 70 64K X 8 DUAL-PORT SRAM, 25 ns, PQFP100
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
