| PART |
Description |
Maker |
| DS1230AB DS1230AB-100 DS1230AB-120 DS1230AB-150 DS |
32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34
256k Nonvolatile SRAM 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
M39012 MIL RF CONNECTOR 256k非易失SRAM
256k Nonvolatile SRAM 256k非易失SRAM
GT 6C 3#0 3#12 PIN PLUG
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GTS; No. of Contacts:48; Connector Shell Size:36; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
M39012 MIL RF CAP
Isolation Transformer
Low-Noise, High-Speed, 16-Bit Accurate CMOS Operational Amplifier 8-MSOP -40 to 125
From old datasheet system
256K Nonovolatile SRAM
3.3V 256k Nonvolatile SRAM
|
Maxim Integrated Products, Inc.
DALLAS[Dallas Semiconductor]
DALLAS[Dallas Semiconducotr]
MAXIM - Dallas Semiconductor
http://
|
| DS1330Y DS1330AB DS1330ABP-100 DS1330ABP-100-IND D |
256k Nonvolatile SRAM with Battery Monitor 256k非易失SRAM与电池监视器
(DS1330Y / DS1330AB) 256k Nonvolatile SRAM with Battery Monitor
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
Dallas Semiconducotr
DALLAS[Dallas Semiconductor]
http://
|
| DS1249Y-85IND |
2048k Nonvolatile SRAM 256K X 8 NON-VOLATILE SRAM MODULE, 85 ns, PDIP32
|
Maxim Integrated Products, Inc.
|
| DS1230AB-120IND |
256k Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
| DS1330WP-100IND DS1330WP-150 |
3.3V 256k Nonvolatile SRAM with Battery Monitor
|
MAXIM - Dallas Semiconductor
|
| DS2030W |
3.3V Single-Piece 256k Nonvolatile SRAM
|
Maxim
|
| M68AW256ML70ZB6 M68AW256ML55ND1 M68AW256ML55ND1E M |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM
256K X 16 STANDARD SRAM, 55 ns, PDSO44
256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| DS1245BL-100-IND DS1245YL DS1245YL-70 DS1245YL-70- |
1024K Nonvolatile SRAM
4096K Nonvolatile SRAM
|
DALLAS[Dallas Semiconductor]
|
| HY62SF16404D HY62SF16404D-DF85I |
256K X 16 STANDARD SRAM, 85 ns, PBGA48
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX SEMICONDUCTOR INC
|
