| PART |
Description |
Maker |
| CLED155 CLED155F |
Gallium Aluminum Arsenide Infrared Emitting Diode
|
Clairex Technologies
ETC[ETC]
|
| CLE331E |
Aluminum Gallium Arsenide IRED Point source Die
|
Clairex Technologies, Inc
|
| CLE300F |
Aluminum Gallium Arsenide IRED Flat Lead PLCC Package
|
Clairex Technologies, Inc
|
| CLE334E |
Very High Output Aluminum Gallium Arsenide Quad Chip IRED Array
|
Clairex Technologies, Inc
|
| MGR1018_D ON1879 MGR1018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| CLE230W CLE231W CLE232W |
880nm IRED, Flat window TO-46
High Power Aluminum Gallium Arsenide IREDs
|
Clairex Technologies, Inc
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| TLP595G |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|
Toshiba Semiconductor
|
| ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| GN01010 |
Gallium Arsenide Devices
|
Panasonic
|
