| PART |
Description |
Maker |
| A43E06321G-95UF A43E06321G-75UF A43E06321G-75F A43 |
General Purpose
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM 12k × 32位2银行低功耗同步DRAM
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
| M12S64322A09 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| HY57V161610ET-10 HY57V161610ET-15 HY57V161610ET-55 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor Inc.
|
| M12S64322A-6BG M12S64322A-6TG M12S64322A-7BG M12S6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12L64322A M12L64322A-6T M12L64322A-7T |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
ETC
|
| A43L0616BV-7F A43L0616BV-6F A43L0616BV-7UF |
512K X 16 Bit X 2 Banks Synchronous DRAM 12k × 16位2银行同步DRAM
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
| A43L0632G-6F A43L0632G-7F A43L0632G-6UF A43L0632G- |
512K X 32 Bit X 2 Banks Synchronous DRAM 12k × 32位2银行同步DRAM
|
AMIC Technology Corporation
http://
AMIC Technology, Corp.
TM Technology, Inc.
|
| M12L64322A-6TG M12L64322A-5BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
| N16D1633LPAZ2-10I N16D1633LPAZ2-75I N16D1633LPAC2- |
512K × 16 Bits × 2 Banks Low Power Synchronous DRAM
|
NanoAmp Solutions, Inc.
|
| N16D1618LPA |
512K X 16 Bits X 2 Banks Low Power Synchronous DRAM
|
NanoAmp Solutions
|
| K4R881869 K4R881869M-NCK8 K4R881869M-NBCCG6 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
