| PART |
Description |
Maker |
| 24C64 TU24C64CP2 TU24C64CP3 TU24C64CS2 TU24C64CS3 |
CMOSIC2-WIREBUS64KELECTRICALLYERASABLEPROGRAMMABLEROM8KX8BITEEPROM
From old datasheet system
CMOS I?C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
CMOS I2C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| HN58C256FP-20 |
32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM
|
Hitachi Semiconductor
|
| HN58C65SERIES 58C65 |
8192-word ′ 8-bit Electrically Erasable and Programmable CMOS
From old datasheet system
|
hitachi
|
| TU24C04BP3I TU24C04BSI TU24C04 TU24C04BP TU24C04BP |
CMOS I2C 2-WIRE BUS 4K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 512 X 8 BIT EEPROM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| AT24C32D-STUM-T AT24C32D-SSHM-B AT24C32D-SSHM-T AT |
electrically erasable and programmable read only memory
2-Wire Serial Electrically Erasable and Programmable Read-only Memory
|
ATMEL Corporation
|
| PA7540P-15 PA7540PI-15 PA7540S-15 PA7540SI-15 PA75 |
PA7540 PEEL Array Programmable Electrically Erasable Logic Array
PA7540 PEEL Array? Programmable Electrically Erasable Logic Array
PA7540 PEEL Array Programmable Electrically Erasable Logic Array
|
http://
ETC
ANACHIP[Anachip Corp]
|
| HN58X2564F HN58X2564FPI |
Electrically Erasable and Programmable Read Only Memory
|
RENESAS
|
| HN58X2516TIE |
Electrically Erasable and Programmable Read Only Memory
|
http://
|
| ATF22V10BQL-25NM_883 ATF22V10B-10GM_883 ATF22V10BQ |
High-performance Electrically Erasable Programmable Logic Device
|
ATMEL Corporation
聚兴科技股份有限公司
|
