| PART |
Description |
Maker |
| NE722S01 NE722S01-T NE722S01-T1B1 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
Duracell
NEC Corp.
NEC[NEC]
|
| NE67483B NE67400 |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| NE5511279A NE5511279A-T1A NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET 邻舍7.5 V UHF频段射频功率硅劳工处场效应晶体管
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| NE6510179A-A NE6510179A-T1 |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
|
Duracell
California Eastern Laboratories
|
| UPG2027TQ UPG2027TQ-E1-A |
NECs L-BAND 4W HIGH POWER SPDT SWITCH IC
|
NEC Corp.
|
| UPG2024TQ UPG2024TQ-E1-A |
NECs GaAs MMIC DPDT SWITCHES FOR 5 GHz BAND WIRELESS LAN
|
California Eastern Labs
|
| SFH611A-1 SFH611A-2 SFH611A-3 SFH611A-3-X001 SFH61 |
TRIOS Single Channel Optocoupler, GaA...
|
Infineon
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| NR8500 NR8500FR-BB-AZ NR8500FR-CB-AZ NR8500CP-BC-A |
CAP 1.0PF 25V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓APD的同轴包55字节/秒和622 Mb / s的应
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓砷APD的同轴包55字节/秒和622 Mb / s的应
NECs φ50 μm InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
California Eastern Laboratories, Inc.
California Eastern Labs
|
| TLP105 |
PHOTOCOUPLER GaA?As IRED & PHOTO-IC
|
Toshiba Semiconductor
|
