| PART |
Description |
Maker |
| MT5LC128K8D4S13A MT5LC64K16D4S13A |
S13A 1 MEG SRAM DIE
|
Micron Technology, Inc.
|
| MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| MT48LC16M16A2P-75DTR |
SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
|
Micron Technology
|
| DS2229 DS2229-85 |
Word-Wide 8 Meg SRAM Stik
|
Dallas Semiconducotr
MAXIM - Dallas Semiconductor
|
| IDT71L016L70PHI IDT71L016 IDT71L016L100PH IDT71L01 |
LOW POWER 3V CMOS SRAM 1 MEG (64K x 16-BIT)
|
IDT[Integrated Device Technology]
|
| CHR CHR2520FC-10MEG-1 CHR2520FC |
10 MEG TO 100 MEG, 1 TOLERANCE, TEMPERATURE COEFFICIENT TO AS LOW AS 25 PPM/C
|
RHOPOINT[RHOPOINT COMPONENTS]
|
| MT8D132M-XXX MT16D232M-XXX MT16D232-6X MT8D132-7X |
1 MEG, 2 MEG x 32 DRAM MODULES 1乙二醇，二乙二醇× 32 DRAM模块
|
Micron Technology, Inc.
|
| MT28F160S3 |
2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16闪速存储器)
|
Micron Technology, Inc.
|
| P3C1011-35TM P3C1011 P3C1011-10JC P3C1011-10JI P3C |
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 20 ns, PDSO44
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 35 ns, PDSO44
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 10 ns, PDSO44
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 25 ns, PDSO44
|
Pyramid Semiconductor C...
PYRAMID[Pyramid Semiconductor Corporation]
Pyramid Semiconductor, Corp.
|
| K7A163631B |
18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE
|
Samsung semiconductor
|
