| PART |
Description |
Maker |
| 4X16E43V 4X16E83V 4X16E83VTW-6 |
4 MEG x 16 EDO DRAM
|
List of Unclassifed Manufacturers
|
| AS4LC4M4883C AS4LC4M4 |
4 meg x 4 DRAM, 3.3V EDO page mode
4 MEG x 4 DRAM 3.3V, EDO PAGE MODE
|
ETC
AUSTIN[Austin Semiconductor]
|
| LC321667BJ LC321667BM LC321667BT-70 LC321667BT-80 |
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
|
| MT4C4001JECJ-7/IT MT4C4001JECJ-7/XT MT4C4001JECG-8 |
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDIP20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CZIP20
|
Austin Semiconductor, Inc
AUSTIN SEMICONDUCTOR INC
|
| HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165TT |
16 M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
1M X 16 EDO DRAM, 70 ns, PDSO50
|
ELPIDA MEMORY INC
|
| HYB3164165BT-40 HYB3165165BT-40 HYB3166165BT-40 HY |
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 60 ns, PDSO50
INDUCTOR CHIP .10UH 5% 0805 SMD 4M X 16 EDO DRAM, 60 ns, PDSO50
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 40 ns, PDSO50
|
http://
SIEMENS A G
SIEMENS AG
|
| HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM
16M x 4 Bit 8k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| AS4C256K16E0-30JC AS4C256K16E0-35JC |
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 30 ns, PDSO40
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 35 ns, PDSO40
5V 256Kx16 CMOS DRAM (EDO) 5V56Kx16的CMOS的DRAM（江户）
|
Alliance Semiconductor, Corp.
|
| MT4LDT464AG MT4LDT264AG MT4LDT164AG |
4 Meg x 64 Nonbuffered DRAM DIMMs(4 M x 64无缓冲动态RAM双列直插存储器模
1 Meg x 64 Nonbuffered DRAM DIMMs(1M x 64无缓冲动态RAM双列直插存储器模 1梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块
2 Meg x 64 Nonbuffered DRAM DIMMs(2M x 64无缓冲动态RAM双列直插存储器模 2梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块
|
Micron Technology, Inc.
|
| HYM72V2005GU-60 HYM72V2005GU-50 HYM64V2005GU-60 HY |
3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
2M x 72 Bit ECC DRAM Module unbuffered
2M x 64 Bit DRAM Module unbuffered
3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HYM72V8025GS-60 HYM72V8025GS-50 HYM72V8035GS-60 HY |
8M x 72 Bit ECC EDO DRAM Module buffered
8M x 72-Bit EDO- DRAM Module (ECC - Module)
8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 60 ns, DMA168
8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
