| PART |
Description |
Maker |
| M5M5256DFP-10VLL M5M5256DFP-10VXL M5M5256DFP-12VLL |
From old datasheet system
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 262144位（32768 - Word位）的CMOS静态RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 262144位（32768 - Word位）的CMOS静态RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word8位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M5256DFP-70VLL-I M5M5256DFP-70VXL-I M5M5256DFP-8 |
32K X 8 STANDARD SRAM, 85 ns, PDSO28 8 X 13.40 MM, TSOP-28
32K X 8 STANDARD SRAM, 85 ns, PDSO28 0.450 INCH, SOP-28
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word8位）的CMOS静态RAM
From old datasheet system
|
Maxim Integrated Products, Inc.
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HM62256BLFP10 HM62256BLFP8 HM62256BLFP-4SLT |
32768-word x 8-bit high speed CMOS static RAM, 45ns
IC-SM-256K CMOS SRAM
|
Hitachi Semiconductor
|
| M5M5256DFP-70LLIBM |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| GR3281 |
32768 word by 8 bits (32K x 8) non-volatile CMOS Static Ram
|
List of Unclassifed Manufacturers
ETC
|
| MSM38256 |
32768 Word x 8 Bit Mask ROM
|
OKI electronic components
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位（8388608字由16位）的CMOS闪存
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| M5M5W817KT-70HI |
Memory>Low Power SRAM
8388608-BIT (524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
