| PART |
Description |
Maker |
| TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| MCC162-18IO1 MCC162-14IO1 MCD162-18IO1 MCD162-12IO |
Thyristor and Rectifiers Modules
PC Board Connector; No. of Contacts:8; Pitch Spacing:3.96mm; No. of Rows:1; Mounting Type:PCB Thru-hole; Body Material:PA Polyamide (Nylon); Contact
Thyristor Modules Thyristor/Diode Modules 300 A, 1400 V, SCR
Thyristor Modules Thyristor/Diode Modules 晶闸管模块可控硅/二极管模
Thyristor Modules Thyristor/Diode Modules 300 A, 800 V, SCR
Thyristor Modules Thyristor/Diode Modules 300 A, 1800 V, SCR
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| QM10HB-2H |
MITSUBISHI TRANSISTOR MODULES DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| BFS360L6 |
2 CHANNEL, S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz
|
INFINEON TECHNOLOGIES AG
|
| MDI550-12A4 MID550-12A4 |
1200V IGBT module
IGBT Modules Short Circuit SOA Capability Square RBSOA
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
| SQD300A60 SQD300A40 SQD300A40-60 |
DARLINGTON TRANSISTOR MODULES
From old datasheet system
|
SANREX[SanRex Corporation]
|
| QM50DY-2HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| BFS466L6 BFS466L6E6327 |
NPN Silicon RF TWIN Transistor NPN硅射频双晶体
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules
|
INFINEON[Infineon Technologies AG]
|
| MCC132 MCC132-08IO1 MCC132-12IO1 MCC132-14IO1 MCC1 |
Thyristor Modules Thyristor/Diode Modules 300 A, 1800 V, SCR
Thyristor Modules Thyristor/Diode Modules 300 A, 1200 V, SCR
Thyristor Modules Thyristor/Diode Modules 300 A, 1400 V, SCR
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| RN2112FT RN2113FT |
IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| QM200DY-24 |
TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM10HA-HB |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
