| PART |
Description |
Maker |
| IRFP470 |
N-Channel Enhancement Mode MegaMOS FET
|
IXYS[IXYS Corporation]
ETC
|
| IXTH10N100 IXTH12N100 IXTM12N100 |
Discrete MOSFETs: Standard N-channel Types
MEGAMOS FET
|
IXYS Corporation
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTW6N100E MTW6N100E_D ON2701 MTW6N100 |
From old datasheet system
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| AD381SH AD381SH_883B AD381 AD382 AD380SH_883B AD38 |
(AD380 / AD382) High Speed / Low Drift FET Operational Amplifier
8-Channel 14-Bit Single-Supply Voltage-Output DAC; Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial
High Speed, Low Drift FET Operational Amplifier OP-AMP, 1000 uV OFFSET-MAX, BCY12
|
AD[Analog Devices]
Analog Devices, Inc.
|
| 2SJ278MYTR-E 2SJ278 2SJ278MYTL-E |
1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| 1N4002GP 1N4005GP 1N4003GP 1N4007GP 1N4001GP 1N400 |
1 Amp Glass PassivatedRectifier 50 - 1000 Volts 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
MCC[Micro Commercial Components]
|
| S558-5999-Q2 |
Xfmr Module 1000 Mbps DATACOM TRANSFORMER FOR 10/100/1000 BASE-T; ETHERNET APPLICATION(S)
|
Bel Fuse, Inc.
|
| U2797B-AFSG3 U2797B U2797B-AFS |
1000-MHz Quadrature Modulator 1000 - MHz的正交调制器
|
Atmel, Corp.
TEMIC[TEMIC Semiconductors]
|
| T9G00410 T9G00412 T9G01010 T9G01012 T9G00110 T9G00 |
Phase Control SCR (1000-1200 Amperes Avg 100-2200 Volts) 第一阶段控制晶闸管（1000-1200安培平均100-2200伏特
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| T82F096562DN T82F056562DN F036542DN F0365B2DN |
1000 A, 900 V, SCR
1000 A, 500 V, SCR
1000 A, 300 V, SCR
|
POWEREX INC
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
