| PART |
Description |
Maker |
| IRF252 IRF253 IRF250 IRF254 IRF251 IRFP251 IRFP253 |
HIGH VOLTAGE POWER MOSFET DIE N-CHANNEL ENHANCEMENT MODE HIGH RUGGEDNESS SERIES
|
IXYS[IXYS Corporation]
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| PSMG100-05 PSMG100_05 PSMG100/05 PSMG10005 |
Power MOSFET
Single MOSFET Die
|
Powersem GmbH
Meder Electronic
|
| GP60PF-1A |
60 AMP PRESS FIT HIGH VOLTAGE DIODES (GPP DIE)
|
Diodes Incorporated
|
| GP50PF-1A |
50 AMP PRESS FIT HIGH VOLTAGE DIODES (GPP DIE)
|
Diodes Incorporated
|
| IXFN280N07 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFN36N100 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
ETC[ETC]
|
| IXFN48N55 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFN44N80 |
HiPerFETTM Power MOSFETs Single MOSFET Die
|
IXYS[IXYS Corporation]
|
| IRFC240 |
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| S2308 |
N-channel SiC power MOSFET bare die
|
Rohm
|
