| PART |
Description |
Maker |
| BFY181 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
|
Siemens Semiconductor G...
|
| BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
|
Siemens Semiconductor G...
|
| BFY196 |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)
|
SIEMENS[Siemens Semiconductor Group]
|
| BFY180 BFY180ES BFY180H BFY180S BFY180P |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies A...
|
| BFY18211 |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| BFY45011 |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BXY43-T1 BXY43 BXY43-FP BXY43-P1 BXY43-T |
PUBLICATIONS, BOOKS RoHS Compliant: NA
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702A674 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching)
|
Siemens Semiconductor G...
|
| BAS70-T1 |
HiRel Silicon Schottky Diode
|
Infineon Technologies AG
|
| BAS40 BAS40-T1 |
HiRel Silicon Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| 6507A MX6507A |
0.3 A, 8 ELEMENT, SILICON, SIGNAL DIODE
Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options
|
MICROSEMI CORP-SCOTTSDALE
MICROSEMI[Microsemi Corporation]
|
| UPD23C64040ALGY-XXX-MK UPD23C64040ALGY-XXX-MJ |
HiRel Silicon Diodes; Package: --; Package: -; IF (max): -; VBR (min): -; rF (typ): -; CT (max): -
x8 or x16 ROM (Mask Programmable) x8或x16光盘（掩模可编程
|
NEC, Corp.
|
