| PART |
Description |
Maker |
| S71WS512N80BAIZZ3 S71WS512N80BFIZZ0 S71WS512N80BFI |
Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
|
SPANSION[SPANSION]
|
| S71WS512NB0BAEZZ0 S71WS512NB0BAEZZ2 S71WS512N80BAI |
Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt 堆叠式多芯片产品（MCP）的闪存和移动存储芯片的CMOS 1.8伏特
|
Spansion Inc.
Spansion, Inc.
|
| S70WS512N00BAWA20 S70WS512N00BAWAA3 S70WS512N00BFW |
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION[SPANSION]
|
| AM49DL322BGT85T AM49DL322BGT85S AM49DL323BGB70T AM |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous 堆叠式多芯片封装MCP）闪存和SRAM32兆位M × 8 2米x 16位）3.0伏的CMOS只，同时
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc.
Advanced Micro Devices, Inc.
|
| S70WS512N00BFWA23 S70WS512N00BAWAB3 S70WS512N00BAW |
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory 同硅晶片堆叠多芯片产品（MCP）的512兆位2兆16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
|
| AM42DL6404G AM42DL6404G85IS AM42DL6404G85IT AM42DL |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
|
SPANSION[SPANSION]
AMD[Advanced Micro Devices]
|
| AM42DL3244GB55IT AM42DL32X4G |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
|
Advanced Micro Devices
|
| S71NS032JA0BJWRT0 S71NS032J80BJWRA |
Stacked Multi-Chip Product (MCP) SPECIALTY MEMORY CIRCUIT, PBGA56
Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品（MCP
|
Spansion, Inc.
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位）的CMOS电压1.8只。同时采取行动，页面模式闪存兆位12x 8-Bit/256x 16位），静态存储器（初步）
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
| C2220C105MCR2L7186 |
Stacked Chip
|
Kemet Corporation
|
| TE28F004B3B110 TE28F004B3B90 TE28F004B3T110 TE28F0 |
3 Volt Advanced Boot Block Flash Memory
|
INTEL[Intel Corporation]
|
