| PART |
Description |
Maker |
| TISP6L7591 TISP6L7591DR-S TISP6L7591DR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Power Innovations Limited
|
| TISP61512P TISP61511D |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
POINN[Power Innovations Ltd]
Power Innovations Limited
|
| TISP61521D-S TISP61521D TISP61521DR-S TISP61521 TI |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solutions
|
| TISP5070H3BJ TISP5070H3BJR TISP5070H3BJR-S TISP5XX |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solutions
|
| 5SHX06F6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX08F4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 390 A, 4500 V, SCR
|
ABB, Ltd.
The ABB Group
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
