| PART |
Description |
Maker |
| Q62703-Q67 LD261 LD261-5 Q62703-Q395 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62703-Q256 LD271H LD271HL Q62703-Q838 Q62703-Q148 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH40903 SFH409 SFH409-2 |
GaAs-IR-Lumineszenzdiode
|
OSRAM GmbH
|
| SFH4205 Q62702-P5165 Q62702-P978 SFH4200 |
Schnelle GaAs-IR-Lumineszenzdiode (950 nm),High-Speed GaAs Infrared Emitter (950 nm)
High-Speed GaAs Infrared Emitter (950...
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SFH415 SFH415_6 SFH416-R Q62702-P1136 Q62702-P1137 |
GaAs-IR-Lumineszenzdioden GaAsInfrared Emitters
From old datasheet system
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TG2211FT |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| TG2216TU |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
Toshiba Corporation
|
| CF004_06 CF004 CF004-01 CF004-02 CF004-03 |
GaAs Pseudomorphic HEMT and MESFET Chips KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
Mimix Broadband, Inc.
MIMIX[Mimix Broadband]
|
| LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
| TG2401F |
1.9 GHz Band TX Fronted IC
PHS, Digital Cordless Telecommunication
GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
| NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D N |
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
